NIST - National Institute of Standards and Technology

11/06/2024 | Press release | Distributed by Public on 11/07/2024 03:13

Synaptic-Like Plasticity in 2D Nanofluidic Memristor from Competitive Bicationic Transport

Published
November 6, 2024

Author(s)

Yechan Noh, Alex Smolyanitsky

Abstract

Synaptic plasticity, the dynamic tuning of communication strength between neurons, serves as a fundamental basis for memory and learning in biological organisms. This adaptive nature of synapses is considered one of the key features contributing to the superior energy efficiency of the brain. In this study, we utilize molecular dynamics simulations to demonstrate synaptic-like plasticity in a subnanoporous 2D membrane under voltage spikes. We show that the spiking voltage dynamically increases the membrane's ionic permeability in a process involving competitive bicationic transport, repeatable after a resting period. Due to a combination of sub-nm pore size and the atomic thinness of the membrane, this system exhibits very low energy dissipation of 0.1-100 aJ per voltage spike, significantly lower than 0.1-10 fJ per spike in the human brain. We reveal the underlying physical mechanisms at molecular detail and investigate the local energetics underlying this apparent synaptic-like behavior.
Citation
Science Advances
Volume
10
Issue
45
Pub Type
Journals

Keywords

nanofluidics, memristor, neuromorphing computing, simulation, theory

Citation

Noh, Y. and Smolyanitsky, A. (2024), Synaptic-Like Plasticity in 2D Nanofluidic Memristor from Competitive Bicationic Transport, Science Advances, [online], https://doi.org/10.1126/sciadv.adr1531, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=957703 (Accessed November 7, 2024)

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