10/03/2024 | Press release | Distributed by Public on 10/03/2024 13:38
Microchips are fabricated by repeating thousands of steps. During the fabrication process, very thin layers of materials are deposited onto a silicon wafer, then etched [Etch Essentials] to create a path through which electricity travels. As the deposition and etch processes are repeated, a complex series of these paths are created to control the flow of electricity that allows a chip to perform its function. Lam has been in the deposition market for nearly 45 years and remains one of the top suppliers in the world for deposition tools.
Deposition processes are primarily used for two purposes:
Think of metal deposition as the process of laying roads where cars are allowed to travel, and dielectric deposition as the process of setting up guidelines and barriers to control the flow of traffic.
Some of the more common methods of deposition in semiconductor manufacturing include:
Chemical vapor deposition (CVD), the process by which the material to be deposited is heated to a very high temperature, transforming it to its gaseous state. The material and the wafer are then placed in a chamber, and the gaseous material reacts with and condenses on the surface of the wafer, forming a thin layer.
Electrochemical deposition (ECD), the process by which a wafer is submerged in a liquid containing positive ions of a conductive material, then connected to a power source. When the wafer is charged, ions in the liquid are attracted and adhere to the wafer, forming a thin layer of the conductive material.
Physical vapor deposition (PVD), the process by which a thin film is deposited by vaporizing a conductive material in a vacuum, then allowing that vapor to cool, settle, and condense on a wafer's surface.
Ultraviolet thermal processing (UVTP), the process by which patterns on a wafer are exposed to ultraviolet (UV) light that emits high-energy photons. The UV light is absorbed by the exposed atoms or molecules on the wafer's surface, which excites them and causes them to heat up. The combination of UV light and heat modify the exposed surface, rapidly creating a non-conductive pattern.
Pulsed laser deposition (PLD) is a variation of the PVD process that uses a high-powered pulsed laser to strike a target material causing a plasma plume. The plume is directed toward and is deposited on a substrate. This process allows for the deposited material to form ultra-thin films over time.
Depending on the desired speed and precision of the final product, a manufacturer will employ any number of the above deposition methods.
Because CVD requires extremely high temperatures, variations of the CVD process have emerged:
Plasma-enhanced CVD (PECVD) is a chemical vapor deposition process that uses plasma to deposit dielectric thin films from a gas state to a solid state on a substrate. By using plasma to provide energy for deposition reactions, it reduces stress between different layers of thin films.
Atomic-layer deposition (ALD) is a highly precise process that deposits a few layers of atoms at a time. This is done by putting the wafer in a reactor chamber and then alternating its exposure to different gases. ALD is useful in creating uniform coatings with sub-nanometer thickness control.
High-density plasma CVD (HDP-CVD) works much like PECVD, the difference being that greater amounts of electricity are applied, creating a super-charged, faster-traveling plasma that coats small gaps in the wafer's surface more effectively.
All these methods listed play important roles in the fabrication of high-performance, high-density, and energy-efficient chips that will power the AI era.
Lam offers many families of deposition systems:
VECTOR®- Dielectric Film Deposition - Plasma enhanced CVD with high productivity multi-station reactor and isolated walls for improved particle control.
Striker® - Dielectric ALD - Multi-station temporal reactor design (fixed wafer location) enabling atomic layer deposition of thin, conformal films with leading uniformity and repeatability at high productivity.
ALTUS®- Metal ALD/CVD - Multi-station ALD/CVD deposition tool enabling leading productivity with superior fill and resistivity performance.
SABRE®& SABRE® 3D - Metal ECD/ELD - Electrochemical deposition (ECD) and electroless deposition systems (ELD) for metallization. Advanced cell design with innovations in chemistry, waveform, and process control enabling for high deposition rate electrochemical deposition (ECD) of large geometry TSV metallization with excellent fill rate and stability.
SOLA®- UVTP - Treatment of insulating materials that are otherwise easily damaged. SOLA's post-deposition film treatments stabilize insulating material, improving chip performance.
SPEED®- HDP-CVD - Deposits insulation layers between conductive areas of a chip by filling gaps of varying sizes. SPEED products' precise filling of these gaps ensures electrical paths within a chip remain separate, resulting in a higher level of control over that chip's processes.
PulsusTM- PLD - Supports deposition of a wide range of materials. Pulsus delivers scandium aluminum nitride (ScAlN) films with the highest scandium content available. Pulsus products are especially effective for Specialty Technologies applications
Reliant®- CVD, HDP-CVD, PECVD, PLD - Supports a wide variety of manufacturing requirements by addressing numerous material and performance needs. By supporting these different technologies in a single offering, Reliant products extend fabs' productive capabilities.
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