12/04/2024 | Press release | Distributed by Public on 12/04/2024 02:31
MALVERN, Pa. - Dec. 4, 2024 - To provide higher efficiency and power density for industrial applications, Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 40 V TrenchFET® Gen V n-channel power MOSFET in the PowerPAK® 10x12 package with best in class on-resistance. Compared to competing devices in the same footprint, the Vishay Siliconix SiJK140E slashes on-resistance by 32 %, while offering 58 % lower on-resistance than 40 V MOSFETs in the TO-263-7L.
With on-resistance down to 0.34 mW typical at 10 V, the device released today minimizes power losses from conduction to increase efficiency, while improving thermal performance with a low RthJC of 0.21 °C/W typical. By allowing designers to utilize one device instead of two in parallel to achieve the same low on-resistance, the SiJK140E also improves reliability and mean time between failures (MTBF).
The MOSFET features a bond-wireless (BWL) design that minimizes parasitic inductance, while maximizing current capability. While TO-263-7L solutions in bond-wired (BW) packages are limited to currents of 200 A, the SiJK140E offers a continuous drain current up to 795 A for increased power density, while providing a robust SOA capability. Occupying an area of 120 mm2, the device's PowerPAK 10x12 package saves 27 % PCB space compared to the TO-263-7L, while offering a 50 % lower profile.
The SiJK140E is ideal for synchronous rectification, hot swap switching, and OR-ing functionality. Typical applications will include motor drive controls, power tools, welding equipment, plasma cutting machines, battery management systems, robotics, and 3D printers. To avoid shoot-through in these products, the standard-level FET offers a high threshold voltage of 2.4Vgs. RoHS-compliant and halogen-free, the MOSFET is 100 % Rg and UIS tested.
Comparison Table PPAK10x12 vs TO-263-7L
Part number |
SiJK140E |
SUM40014M |
Performance Improved |
|
Package |
PowerPAK10x12 |
TO-263-7L |
- |
|
Dimensions (mm) |
10 x 12 |
10.4 x 16 |
+27 % |
|
Hight |
2.4 |
4.8 |
+50 % |
|
VDS (V) |
40 |
40 |
- |
|
VGS (V) |
± 20 |
± 20 |
- |
|
Configuration |
Single |
Single |
- |
|
VGSth (V) |
Min. |
2.4 |
1.1 |
+118 % |
RDS(on) (mΩ) @ 10 VGS |
Typ. |
0.34 |
0.82 |
+58 % |
Max. |
0.47 |
0.99 |
+53 % |
|
Qg (nC) @ 10 VGS |
Typ. |
312 |
182 |
- |
FOM |
- |
106 |
149 |
+29 % |
ID (A) |
Max. |
795 |
200 |
+397 % |
RthJC (C/W) |
Max. |
0.21 |
0.4 |
47 % |
Samples and production quantities of the SiJK140E are available now, with lead times of 36 weeks.