PANJIT’s Innovative Trench Power MOSFET：Automotive Grade 60 V N Channel Gen.1 SGT Series

As the automotive industry accelerates toward intelligence, and interconnected systems, PANJIT has introduced its latest series of automotive-grade 60 V N-channel MOSFETs, featuring SGT technology to support power devices for automotive vehicles. Engineered to deliver an excellent figure of merit (FOM), ultra-low R_DS(ON), and minimized capacitance, this series plays a pivotal role in enhancing performance and energy efficiency in automotive electronic systems by reducing both conduction and switching losses, thereby delivering superior electrical performance.

Our 60 V N-channel SGT MOSFETs, available in a range of compact and efficient packages including DFN3333-8L, DFN5060-8L, DFN5060B-8L, TO-252AA, and TO-220AB-L, deliver reliable solutions for various power electronic applications. With AEC-Q101 qualification, these MOSFETs feature excellent conduction and switching characteristics, making them an ideal choice for power conversion, driving, and control applications. Additionally, an operating junction temperature of up to 175°C provides optimal design flexibility for modern electronics.

PANJIT's advancements in SGT-MOSFETs will not only drive progress in automotive technology but foster the ongoing growth and development of the entire vehicle industry chain, supporting a wide range of end applications. Moreover, our products utilize a green molding compound that complies with the IEC 61249 standard and EU RoHS 2.0., underscoring our commitment to delivering high-performance, reliable, and environmentally friendly solutions to our customers.

What's SGT-MOSFET?

Shielded Gate Trench (SGT) MOSFETs are key medium-voltage MOSFETs widely utilized in high-performance applications across power supplies, industrial systems, and automotive devices, as core power control components. With an increased trench depth, their unique charge-coupled structure enables both horizontal and vertical depletion, enhancing breakdown voltage and enabling superior performance at similar doping concentrations.

Compared to traditional trench MOSFETs, SGT-MOSFETs add a shielding electrode under the gate electrode, which is connected to the source electrode. This design effectively shields both the gate and the drift region, reducing Miller capacitance and lowering switching losses. Additionally, this design also reduces the critical electric field in the drift region, lowering the total gate charge (Q_g, @R_DS(on) 3 mΩ) by 57% and significantly enhancing the figure of merit (FOM).

Key Features

• SGT Technology
Enhances efficiency and performance, meeting rigorous power demands.
• AEC-Q101 Qualified
Ensures exceptional durability for rigorous automotive and industrial applications.
• Ultra Low On-resistance
Minimizes power loss, maximizing energy efficiency in power-sensitive designs.
• High Power Density Package
Compact design that delivers robust power output, making it the preferred choice for various applications
• High Junction Temperature
Supports stable operation in extreme conditions, withstanding temperatures up to 175℃.

Target Applications

• 
  
• Automotive
• 
  
• Power Supply
• 
  
  Advanced Driver Assistance Systems (ADAS)
  
  Actuator
  
  Body Control Unit (BCU)
  
  Battery Management Systems
  
  Cooling Fan
  
  Engine Control Unit
  
  Infotainment / Instrument
  
  Server Embedded System
  
  LED Lighting
  
  
  
  Motor Pump
  
  
• Industrial
• 
  
  On Board Charger
  
  Electric Fan
  
  Sensor
  
  Industrial PC
  
  USB Charger / USB Hubs
  
  PV Inverter / Controller
  
  Wireless Charging
  
  Welding Machine

60 V N-Channel Gen.1 SGT Series List

Product Recommendation

• PJQ5560A-AU
• 
  This 60 V N-Channel Enhancement Mode MOSFET featuring an exceptional FOM, (Q_g, V_GS@10 V, I_D@20 A<82 nC) and low ON-resistance (R_DS(ON), V_GS@10 V, I_D@20 A<2.6 mΩ) in a compact DFN5060-8L package. The product, qualified to the Automotive Electronics Council (AEC) Q101 standard and designed with a logic level drive, making it ideal for advanced driver assistance systems (ADAS), body & comfort and automotive infotainment in automotive application.
  
  Welcome to download ⮕ Data Sheet / STEP File / SPICE Model

About PANJIT

PANJIT International Inc. (TWSE : 2481) is a global IDM that offers a broad product portfolio, including ICs, IGBTs , MOSFETs, Schottky diodes, SiC devices, diode rectifiers, protection devices, bipolar junction transistors, bridges, and more. The company aims to meet the needs of customers in various applications such as automotive, power supply, industrial, computing, consumer, and communication. With relevant system certificates, such as ISO 9001, IATF 16949, ISO 14000, ISO45001, IECQ QC080000, ESD S20.20 and ISO27001. Our vision is to power the world with our robust quality and energy-efficient products, bringing people a greener and smarter future. Our core values include innovation, accountability, customer focus, learning & growth, mutual trust, and collaboration.
PANJIT recognizes the importance of ESG and actively aligns with global sustainability trends. We are committed to enhancing our environmental sustainability performance, guided by three core visions: "Strengthening Green Energy, Sustaining Forest Prosperity", "Cultivating a Joyful, Resilient Workplace" and "Upholding Integrity, Collaborating for Sustainable Prosperity". PANJIT is dedicated to providing high-performance, reliable, and eco-friendly products to our customers. Click here to read our ESG Report and learn more.
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Sample available

These new products can be purchased from PANJIT's E-commerce channels Digikey, Mouser, TTI, TTI Europe, TTI Asia, Chip One Stop.